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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1504-1506 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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