Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1504-1506
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreement. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126077
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