ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing (RTA) have been investigated. Capacitance equivalent oxide thickness (CET) of 45 Å hafnium oxide was scaled down to ∼10 Å with a leakage current less than 3×10−2 A/cm2 at −1.5 V (i.e., ∼2 V below VFB). Leakage current increase due to crystallization was not observed even after 900 °C rapid thermal annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer growth and possible silicate formation in the HfO2 film. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126214