Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1837-1839
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphic diamond deposited from an intense laser plasma of C3+ and C4+ exhibits semiconductor properties. Although this material has a measured electrical breakdown strength of 3×109 V/m, it is shown to form a heterojunction with both p- and n-type Si. Regardless of the doping type and its concentration in the Si, current is rectified in the same direction with the diamond layer acting as the cathode. A photoconductive effect is observed for these junction devices and current levels from the heterojunction vary with the amount of reverse bias and the illumination. The spectral response is estimated to mostly lie in the range of 600–900 nm. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1311312
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