ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality bulk InGaAs and InAlAs/InGaAs heterostructures have been grown on InP substrates with different orientation using molecular-beam epitaxy. It was found that the electrical and structural properties were strongly dependent on growth temperature and substrate misorientation. The electrical and structural properties of the film were investigated by high-resolution x-ray diffraction, Nomarski microscope, and Hall measurements. Full-width at half-maximum of 380 arcsec for bulk InGaAs on (111)B and 70 arcsec on (111)B misoriented by 1° towards 〈211〉 InP substrates were measured by x-ray diffraction. The room temperature electron Hall mobility for bulk InGaAs of 5100 cm2/V s, doped with Si concentration at the mid-1017/cm3, and two-dimensional electron gas mobility of 11 200 cm2/V s, and sheet density of 3.0×1012/cm2 for InAlAs/InGaAs heterostructures on (111)B misoriented by 1° towards 〈211〉 InP substrates were achieved. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1332836
