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Nanobelts of the dielectric material Ge3N4 (2001)

Gao, Y. H. ; Bando, Y. ; Sato, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 4565-4567

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Ge3N4 nanobelts 30–300 nm in width were synthesized by thermal reduction of a mixed Ge+SiO2 powder in NH3 atmosphere. These nanobelts were studied by high-resolution transmission electron microscope equipped with an x-ray energy dispersive spectrometer. In these synthesized nanobelts, the existence of α and β phases of Ge3N4 was identified. The α phase exhibiting slight difference from an ideal α-Ge3N4 phase was also found in the present Ge3N4 material. The mechanism of formation of the Ge3N4 nanobelts is discussed. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1428634

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