Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 1103-1105
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Boron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion. The samples were damaged by Si implants at different doses in the range 2×1013–1×1014 cm−2 and annealed at 740 °C for times between 2 s and 4 h. The values of interstitial supersaturation, from the beginning of the annealing up to the complete damage recovery, have been determined for the different Si doses for a given B doping level. Damage removal has been followed by double crystal x-ray diffraction. Our results confirm that the formation of boron-interstitial silicon clusters traps a relevant fraction of the interstitials produced by the implantation. This trapping action gives rise to a strong reduction of the interstitial supersaturation, prevents the interstitial clusters from being transformed in {113} defects and modifies the time evolution of the transient enhanced diffusion. X-ray analyses indicate also that the size of the boron-interstitial silicon clusters remains below 2 nm. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1396310
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