ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes (1999)

Liu, Z.G. ; Yin, J. ; Wu, Z.C.

Springer

Applied physics 69 (1999), S. S659

add to mindlist on the mindlist

Details

ISSN: 1432-0630

Keywords: PACS: 77.55.+f; 77.80.Dj; 77.80.Fm

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract. New methods for fabricating highly 〈001〉-oriented and complete 〈111〉-textured Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT) films on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition have been developed using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes. The 〈001〉-preferred orientated PTZT ferroelectric capacitor was not subjected to loss of its polarization after 1×1010 switching cycles at an applied voltage of 5 V and a frequency of 1 MHz, and the 〈111〉-textured PTZT film capacitor retains 94.7% of its polarization after 1.5×1010 switching cycles at 5 V and 50 kHz. The PTZT capacitors using these conductive oxide electrodes have low leakage current dominated by Schottky field emission mechanism.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s003390051499

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit