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The role of the interfacial SiOx layer in SnO2/n-Si photocells (1984)

Badawy, W. ; Doblhofer, K.

Springer

Applied physics 35 (1984), S. 189-192

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ISSN: 1432-0630

Keywords: 68.00 ; 73.40 ; 86.30

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract It is proposed that the charge transport across the SiO x layer at the interface SnO2/Si proceeds by a hopping mechanism. During heat treatment of the photovoltaic cells, in air, chemical reactions occur with O2/H2O, which lead to a drastic reduction of the density of hopping sites near the Si conduction band edge. The SiO x hopping sites of energy near the valence band edge are less affected by these chemical reactions. Thus, photogenerated holes can still pass the barrier while the dark current flow is strongly inhibited.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00616973

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