ISSN:
1432-0630
Keywords:
61.80P
;
61.50C
;
61.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Si 〈111〉 single crystals implanted with 40 keV Pb+ have been analyzed by channeling and reflection high-energy electron diffraction (RHEED) techniques. A suitable use of both techniques gives information on the thickness of the damaged regions. In particular, 60 KV electron impinging at ∼0.3° and 1° with respect to the crystal surface give information on 40 Å and 100 Å thick Si layers, respectively. The low dose implanted region grow epitaxially onto the underlaying Si single crystal substrate. High dose implantation will not allow recrystallization for annealing temperature up to 900°.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00928215
