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Cathodoluminescence depth analysis in SiO2-Si-systems (1998)

Goldberg, M. ; Barfels, T. ; Fitting, H.-J.

Springer

Fresenius' journal of analytical chemistry 361 (1998), S. 560-561

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ISSN: 1432-1130

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Abstract SEM cathodoluminescence (CL) is extended to luminescence center spatial depth profiling by means of electron beam energy E0 variation and consequently variation of CL excitation range. In this way the CL profile of SiO2-layers on Si substrate offers a dead layer of luminescence beneath the surface (10–75) nm as well as the SiO2 oxide thickness with an accuracy of better 10% across a small spot area of less than 1 μm.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s002160050947

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