ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Transmission electron microscopy was used to study the microstructure of GaN films undoped or Si-doped to 1017 or 1018 cm−3 and grown by molecular-beam epitaxy on (0001) Al2O3 substrate without nitridation or a buffer layer. Defect structures including inversion domains, nanopipes, and (0001) stacking faults were studied. The influence of Si doping on the threading dislocation density and the dimensions of GaN grains bounded by inversion domains was assessed. Smoothing of the steplike morphology of the GaN film surface occurs at a Si concentration of 1017 cm−3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188090