ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract MOCVD-grown heterostructures with one or several InxGa1−x N layers in a GaN matrix have been studied by transmission electron microscopy. In heterostructures with thick InGaN layers, a noncoherent system of domains with lateral dimensions (∼50 nm) on the order of the layer thickness (∼40 nm) is formed. In the case of ultrathin InGaN inclusions, nanodomains coherent with the GaN matrix are formed. The content of indium in nanodomains, determined by the DALI method, is as high as x≈0.6 or more, substantially exceeding the average In concentration. The density of the nanodomains formed in the structures studied is n≈(2–5)×1011 cm−2. In the structures with ultrathin InGaN inclusions, two characteristic nanodomain sizes are observed (3–6 and 8–15 nm).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188041
