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Determination of trace element in a silicon single crystal (1993)

Takeuchi, T. ; Nakano, Y. ; Fukuda, T. ; [et al.]

Springer

Journal of radioanalytical and nuclear chemistry 168 (1993), S. 367-376

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ISSN: 1588-2780

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering

Notes: Abstract Neutron activation analysis was applied to the determination of trace impurity elements in a silicon ingot. Detection limits of 36 elements were calculated semi — empirically and compared with minimum concentrations detected in a silicon single crystal. The sources of the impurities were estimated from element concentrations detected in polycrystalline silicon and a quartz crucible. Segregation coefficients were determined from the concentration curves in a single crystal and discussed by comparing with reported values.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF02040516

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