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Thin films of semiconductors and dielectrics produced by laser evaporation (1970)

Ban, V. S. ; Kramer, D. A.

Springer

Journal of materials science 5 (1970), S. 978-982

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ISSN: 1573-4803

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Notes: Abstract Thin films of several III–V and II–VI compounds as well as of some dielectrics have been vacuum-deposited using a focused beam of a CO2 or ruby laser to evaporate these materials. The crystallinity, morphology and the chemical composition of the produced thin films have been examined by various analytical methods. Films produced by the ruby laser were in most cases polycrystalline and stoichiometric, while films produced by the CO2 laser were amorphous and non-stoichiometric. Different mechanisms of evaporation leading to the observed differences in characteristics of thin films are discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00558179

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