Electronic Resource
Springer
Hyperfine interactions
18 (1984), S. 517-524
ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A chain of arguments is made which draws on the experimental results ofμSR, muon-pion-decay channeling, and3He channeling in deuterium-implanted silicon and which leads to a plausible site for the anomalous muonium atom Mu* in the group-IV semiconductors. I propose that Mu* in silicon occupies the deuterium position approximately 1.6 Å from a Si atom in a [111] anti-bonding direction and that analogous sites are occupied in Ge and diamond. Some possible implications of this site assignment are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02064863
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