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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Hyperfine interactions 112 (1998), S. 185-188 
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Iron implanted and subsequently annealed n-type Si(111) was studied by conversion electron Mössbauer spectroscopy for phase analysis and Auger electron spectroscopy for sputter depth profiling and element mapping. During implantation (200 keV, 3 × 1017 cm−2, 350°C) a mixture of β- and α-FeSi2 is firmed and after the subsequent annealing (900°C for 18 h and 1150°C for 1 h) a complete transition to the β- and the α-phase can be detected. The as-implanted profile has Gaussian shape and is broadening during annealing at 900°C to a plateau-like profile and shows only a slight broadening and depth depending fluctuations of the iron concentration after the 1150°C annealing. With scanning Auger electron spectroscopy the lateral iron and silicon distribution were investigated and show for the sample annealed at 900°C large separated β-FeSi2 precipitates which grow due to the process of Ostwald ripening. At 1150°C additionally coalescence of the precipitates occur and a wide extended penetration α-FeSi2 network structure is formed.
    Type of Medium: Electronic Resource
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