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General plasma behavior in the energy relaxation of electrons in highly p-doped semiconductors (1998)

Hohenester, U. ; Kocevar, P. ; Hecker, N.E. ; [et al.]

Springer

The European physical journal 5 (1998), S. 143-152

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ISSN: 1434-6036

Keywords: PACS. 78.47.+p Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter - 72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping - 71.10.Ca Electron gas, Fermi gas

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract: We present a systematic study of the dependence of the energy relaxation of photo-excited minority electrons on the doping concentration in highly p-doped GaAs. A nonmonotonic dependence is found in the region where the characteristics of the carrier-carrier interaction changes from plasmon-mediated to quasistatically screened. Using a detailed Monte-Carlo study we are able to attribute this observation to a general property of plasmas at high density.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s100510050427

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