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Density matrix theory of population inversion in biased semiconductor superlattices (2003)

Kleinert, P. ; Bryksin, V.V.

Springer

The European physical journal 31 (2003), S. 489-494

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ISSN: 1434-6036

Keywords: PACS. 73.40.Gk Tunneling – 73.50.Fq High-field and nonlinear effects

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract: The field-induced carrier redistribution between the subbands of a semiconductor superlattice is treated using the density matrix approach. The unit cell of the superlattice consists of one quantum well with three occupied subbands. Carrier scattering on polar-optical phonons is described within the microscopic bulk phonon model. At the tunneling resonance, an intrinsic population inversion is observed. The temperature dependence of the population inversion is determined.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1140/epjb/e2003-00058-x

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