Publikationsdatum:
2019-06-27
Beschreibung:
Silicon with thermally-grown oxide overlayers in the thickness range 15-89 A is studied by angular-dependent XPS. Electron attenuation lengths at 1382 eV are found to be 37 plus or minus 4 A in SiO2 and 27 plus or minus 6 A in Si. Single-crystal effects and thin-layer anomalies are also discussed.
Schlagwort(e):
SOLID-STATE PHYSICS
Materialart:
Chemical Physics Letters; 44; Dec. 1
Format:
text