Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 7139-7141
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We report the results for the electronic structure of the interstitial Pd-substitutional B complex in silicon. The self-consistent field calculations were performed within the framework of scattered-wave Xα cluster method. Compared with the electronic structures of the isolated substitutional B in silicon and of the isolated interstitial Pd in silicon, we found that the shallow acceptor B impurity state is deepened by the perturbation from the Pd atom. The ionic model, which is currently accepted to describe interstitial 3d transition metal-III A group shallow acceptor impurity pair, is not quite suitable to deal with the system of Pd-B complex in silicon.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.344537
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