Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1535-1536
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
In this letter, we report the measurement of the gain of an optically pumped Al0.1Ga0.9N/GaN double heterostructure (DH) which was prepared on a sapphire substrate by metalorganic vapor phase epitaxy using an AlN buffer layer. At room temperature, the optical gain of stimulated emission from Al0.1Ga0.9N/GaN DH was measured to be 160 cm−1 at pumping power density of 200 kW/cm2.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.111883
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