Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2824-2826
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
It is found that the negative effective correlation energy (−U) model for the K defects in hydrogenated amorphous silicon nitride (a-SiNx:H) cannot explain the observed subgap absorption in the optical spectra. An alternative model which describes a-SiNx:H as a compositionally heterogeneous material with spatial band-gap fluctuations is suggested. This model allows a qualitative explanation of the experimental results without having to assume a negative sign for the defect correlation energy. Other semi-insulating amorphous semiconductors, such as a-SiOx:H, also show evidence for compositional heterogeneities. © 1994 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.112577
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