Publication Date:
1987-01-01
Description:
Substituting glass by SiO2in thick film resistors results in a small increase of R□, a decrease of dR□/dT and an increase of d2R□/dT2(at room temperature). From these experimental results it follows that substituting glass by SiO2leads to an increase in the resistance of the tunnel barrier, determining the resistivity of the TFRs. The other microscopic quantities, like charging energy andHTCρof ruthenate, are estimated using the model of Pike and Seager, the generalization of Which (necessary in order to take into account the influence of the strain dependence of R□and R□(T) in a correct way) is derived.
Print ISSN:
0882-7516
Electronic ISSN:
1563-5031
Topics:
Electrical Engineering, Measurement and Control Technology