Publication Date:
2018-11-06
Description:
Author(s): C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, and M. L. W. Thewalt Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much... [Phys. Rev. B 98, 195201] Published Mon Nov 05, 2018
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics