Publication Date:
2018-02-23
Description:
Author(s): Yuan-Yao He, Xiao Yan Xu, Kai Sun, Fakher F. Assaad, Zi Yang Meng, and Zhong-Yi Lu Using large-scale quantum Monte Carlo simulations, the authors unbiasedly demonstrate the existence of a topological Mott insulator – an interaction-driven topological insulator emerging from a strongly correlated Dirac semimetal. The model designed here consists of Dirac fermions and fluctuating Ising fields mediating interactions between fermions. By tuning the fluctuation strength of the Ising fields, the authors show the existence of a topological quantum phase transition between the topological Mott insulator phase and the Dirac-semimetal phase. Furthermore, the quantum critical point was found to be in the (2+1)D N =8 Chiral Ising universality class. [Phys. Rev. B 97, 081110(R)] Published Thu Feb 22, 2018
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
