Publication Date:
2017-12-22
Description:
In this paper, the effect of C incorporation on the out-diffusion of B dopant in SiGe during high-temperature annealing and the out-diffusion of B dopant at different annealing temperatures were studied. The experimental results indicated that more than 0.1% C incorporation had a significant inhibitory effect on the out-diffusion of B, but that the inhibition was obviously reduced when the processing temperature was over 1050 °C. In addition, because the atomic radius of C is smaller than that of Si, Ge, the C incorporation compensates the strain of SiGe, and adjusts the lattice mismatch, thus enhancing the thermal stability of SiGe.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics