Publication Date:
2017-11-22
Description:
Author(s): Dilyara Timerkaeva, Damien Caliste, Thierry Deutsch, and Pascal Pochet The impact of a heavy doping on oxygen diffusion at 350 ∘ C − 700 ∘ C is widely discussed in literature, however, the retardation/enhancement mechanisms remains unclear at that temperature range. In this paper, we study the impact of heavy doping on the oxygen diffusion coefficient in silicon by using de... [Phys. Rev. B 96, 195306] Published Tue Nov 21, 2017
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics