Publication Date:
2017-08-04
Description:
Author(s): Alain Nogaret, Puja Mondal, Ankip Kumar, Sankalpa Ghosh, Harvey Beere, and David Ritchie We report on the transition from magnetic edge to electric edge transport in a split magnetic gate device which applies a notch magnetic field to a two-dimensional electron gas. The gate bias allows tuning the overlap of magnetic and electric edge wave functions on the scale of the magnetic length. ... [Phys. Rev. B 96, 081302(R)] Published Wed Aug 02, 2017
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics