Publication Date:
2017-04-21
Description:
Author(s): A. Bogan, S. A. Studenikin, M. Korkusinski, G. C. Aers, L. Gaudreau, P. Zawadzki, A. S. Sachrajda, L. A. Tracy, J. L. Reno, and T. W. Hargett Hole transport experiments were performed on a gated double quantum dot device defined in a p - GaAs / AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit… [Phys. Rev. Lett. 118, 167701] Published Thu Apr 20, 2017
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics