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$400~mu $ m Diameter APD OEIC in $0.35~mu text{m}$ BiCMOS (2016)

Institute of Electrical and Electronics Engineers (IEEE)

In: IEEE Photonics Technology Letters

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Publication Date: 2016-07-15

Description: An optoelectronic integrated circuit (OEIC) with a $400~mu text{m}$ diameter avalanche photodiode (APD) is present. The OEIC is designed for use in systems of optical wireless communication and communication over plastic optical fiber. The used APD reaches a quantum efficiency of 81.7% without an anti-reflection coating. In combination with the $0.35~mu text{m}$ bipolar complementary metal-oxide–semiconductor circuit, a data rate of 2 Gb/s can be reached with a sensitivity of −30.6 dBm (bit error rate $10^{mathrm {{-9}}})$ at a wavelength of 675 nm. The OEIC occupies an area of 960 $mu text{m} ,, times ,, 1540~mu text{m}$ and is supplied with 3.3 V with a current consumption of 74 mA.

Print ISSN: 1041-1135

Electronic ISSN: 1941-0174

Topics: Electrical Engineering, Measurement and Control Technology

Published by Institute of Electrical and Electronics Engineers (IEEE) on behalf of The IEEE Photonics Society.

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