Publication Date:
2016-06-08
Description:
Author(s): V. Shahnazaryan, I. A. Shelykh, and O. Kyriienko We analyze theoretically the Coulomb scattering processes of highly excited excitons in the direct-band-gap semiconductor quantum wells. We find that contrary to the interaction of ground-state excitons, the electron and hole exchange interaction between excited excitons has an attractive character … [Phys. Rev. B 93, 245302] Published Tue Jun 07, 2016
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics