Publication Date:
2016-05-10
Description:
Rhenium disulfide (ReS 2 ) is a semiconducting layered transition metal dichalcogenide that exhibits a stable distorted 1 T (Re in octahedral coordination) phase. The reduced symmetry in ReS 2 leads to in-plane anisotropy in various material properties. In this work, we performed a comprehensive first-principle computational study of strain effect on the anisotropic mechanical and electronic properties of ReS 2 monolayers. We found that the anisotropic ratio in electron mobility along two principle axes is 2.36 while the ratio in hole mobility reaches 7.76. The study of strain applied along different directions shows that the elastic modulus is largest for out-of-plane direction, and the strain along a-direction induces indirect bandgap while strain along b- or c-direction does not. In addition, the carrier mobility can be significantly improved by the c-direction tensile strain. This study indicates that the ReS 2 monolayer has promising applications in nanoscale strain sensor and conductance-switch FETs.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
