Publication Date:
2016-01-21
Description:
Author(s): J. Sforzini, M. Telychko, O. Krejčí, M. Vondráček, M. Švec, F. C. Bocquet, and F. S. Tautz We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6 H − SiC ( 0001 ) . Photoemission experiments reveal the presence of two chemical states, namely, boron in the uppermost SiC bilayers and boron substituted in both the graphene an… [Phys. Rev. B 93, 041302(R)] Published Tue Jan 19, 2016
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics