Publication Date:
2015-10-13
Description:
Author(s): F. Herklotz, A. Hupfer, K. M. Johansen, B. G. Svensson, S. G. Koch, and E. V. Lavrov A hydrogen-related defect in ZnO which causes two broad IR absorption bands at 3303 and 3321 cm − 1 is studied by means of infrared absorption spectroscopy and first-principles theory. In deuterated samples, the defect reveals two sharp absorption lines at 2466 and 2488 cm − 1 accompanied by weaker side… [Phys. Rev. B 92, 155203] Published Fri Oct 09, 2015
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics