Publication Date:
2015-08-27
Description:
Indium-doped Cu 2 O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O 2 . Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu 2 O, with no other phases detected. Indium atoms exist as In 3+ in Cu 2 O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics