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Comparative study of ab initio nonradiative recombination rate calculations under different formalisms (2015)

Lin Shi, Ke Xu, and Lin-Wang Wang

American Physical Society (APS)

In: Physical Review B

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Publication Date: 2015-05-29

Description: Author(s): Lin Shi, Ke Xu, and Lin-Wang Wang Nonradiative deep level carrier trapping, also known as the Shockley-Read-Hall effect, is an old and important problem in semiconductor physics. Five different possible formalisms, which have given very different results for calculations of the capture coefficients, are compared here with each other and with extant experimental results for two complex defect structures: GaP:Zn G a -O P and GaN:Zn G a -V N . The static coupling theory is shown to be in the best agreement with experiment and arguments are provided for why it should be used in calculations of nonradiative carrier recombination. [Phys. Rev. B 91, 205315] Published Wed May 27, 2015

Keywords: Semiconductors II: surfaces, interfaces, microstructures, and related topics

Print ISSN: 1098-0121

Electronic ISSN: 1095-3795

Topics: Physics

Published by American Physical Society (APS)

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