Publication Date:
2015-01-15
Description:
We show that the n -type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10 18 m −2 and a high electron mobility ( μ 〉 0.1 m 2 V −1 s −1 at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics