Publication Date:
2014-11-18
Description:
Author(s): S. G. Koch, E. V. Lavrov, and J. Weber Using Raman scattering, molecular hydrogen defects are shown to exist in ZnO, the first II-VI semiconductor in which this has been observed. The rotational-vibrational properties of the defects are shown to depend on the history of the sample and an ortho-para conversion between the nuclear spin states is observed. [Phys. Rev. B 90, 205212] Published Mon Nov 17, 2014
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics