Publication Date:
2014-10-17
Description:
InGaN layers were grown simultaneously on ( 11 2 ¯ 2 ) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics