Publication Date:
2014-09-25
Description:
Two kinds of 〈111〉-oriented β-SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (〈 d 〉) as a function of the distance from substrate ( h ) follows power laws of 〈 d 〉 ∝ h 0.62 and 〈 d 〉 ∝ h 0.71 , respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike β-SiC films inclined to growth direction, which can be annihilated with meeting of anti-couple defect. This self-vanish of defects would develop a new approach to fabricate high quality 〈111〉-oriented β-SiC.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics