Publication Date:
2014-07-01
Description:
We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al 2 O 3 /GaSb MOS interface properties. The Al 2 O 3 /GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density ( D it ) of ∼4.5 × 10 13 cm −2 eV −1 . We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al 2 O 3 /GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics