Publikationsdatum:
2013-12-17
Beschreibung:
Author(s): Siyuan Zhang, Yucheng Zhang, Ying Cui, Christoph Freysoldt, Jörg Neugebauer, Ruben R. Lieten, Jonathan S. Barnard, and Colin J. Humphreys The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and ... [Phys. Rev. Lett. 111, 256101] Published Mon Dec 16, 2013
Schlagwort(e):
Condensed Matter: Structure, etc.
Print ISSN:
0031-9007
Digitale ISSN:
1079-7114
Thema:
Physik