Publication Date:
2013-09-24
Description:
Author(s): O. Romanyuk, T. Hannappel, and F. Grosse The atomic structure of GaP(111)/Si(111), GaP(110)/Si(110), and GaP(113)/Si(113) heterointerfaces was studied by ab initio calculations employing the density functional theory (DFT). Relative formation energies were computed for the interface layers allowing for atomic intermixing. The application o... [Phys. Rev. B 88, 115312] Published Mon Sep 23, 2013
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics