Publication Date:
2013-09-18
Description:
C. Pietzka, J. Scharpf, M. Fikry, D. Heinz, K. Forghani et al. Diamond surface channel field effect transistors were passivated with thin AlN layers grown by metal-organic chemical vapor deposition in order to improve the chemical stability of the surface-near p-type channel. Electrical characterization showed that the surface-near conductivity in the diamond i ... [J. Appl. Phys. 114, 114503 (2013)] published Tue Sep 17, 2013.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics