Publication Date:
2013-09-17
Description:
L. Redaelli, H. Wenzel, M. Martens, S. Einfeldt, M. Kneissl et al. The threshold current density of narrow (1.5 [mu]m) ridge waveguide (In,Al)GaN based laser diodes is found to strongly depend on the ridge etch depth. By solving the complex-value two-dimensional waveguide equation, it is shown that, for shallow-ridge devices with a small built-in index step, the de ... [J. Appl. Phys. 114, 113102 (2013)] published Mon Sep 16, 2013.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics