Publication Date:
2013-09-17
Description:
Ian P. Seetoh, Chew Beng Soh, Li Zhang, Kar Hoo Patrick Tung, Eugene A. Fitzgerald et al. InN was grown over nanoporous GaN by metal-organic chemical vapor deposition. Additional free surfaces in the numerous GaN nanopores reduced the surface energy and encouraged extensive nucleation and uniform growth of InN nanoislands. Conversely, coarse and poorly distributed InN islands grew on pla ... [Appl. Phys. Lett. 103, 121903 (2013)] published Mon Sep 16, 2013.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics