Publication Date:
2013-09-13
Description:
Souheil Mouetsi and Abdelillah El Hdiy The 1/f noise is investigated in an epitaxial AlGaAs/GaAs/AlGaAs heterostructure in the temperature range of [4300 K]. The sample is biased at very low voltage to avoid velocity saturation at low temperature. Hooge parameters are determined at very low frequency assuming the absence of correlation b ... [J. Appl. Phys. 114, 104507 (2013)] published Thu Sep 12, 2013.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics