Publication Date:
2013-04-26
Description:
Author(s): N. Pavarelli, T. J. Ochalski, F. Murphy-Armando, Y. Huo, M. Schmidt, G. Huyet, and J. S. Harris We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms comp... [Phys. Rev. Lett. 110, 177404] Published Thu Apr 25, 2013
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics