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Systematic Compact Modeling of Correlated Noise in Bipolar Transistors (2012)

Institute of Electrical and Electronics Engineers (IEEE)

In: IEEE Transactions on Microwave Theory and Techniques (T-MTT)

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Publication Date: 2012-12-11

Description: A systematic method for the integration of correlated shot-noise sources into compact models (CMs) is presented, which significantly improves the accuracy of predicted high-frequency noise in transistors. The developed method relies on a system theory approach, and hence, is not limited to specific CM or device type. In this paper, the method is applied to the CM HICUM, which serves a vehicle for verification purposes. The method and its implementation were verified for SiGe heterojunction bipolar transistors based on measured data for frequencies up to 50 GHz, as well as on device simulation data up to 500 GHz, obtained from simulations of both hydrodynamic and a Boltzmann transport model.

Print ISSN: 0018-9480

Topics: Electrical Engineering, Measurement and Control Technology

Published by Institute of Electrical and Electronics Engineers (IEEE)

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