Publication Date:
2012-10-02
Description:
Author(s): B. C. Chapler, S. Mack, L. Ju, T. W. Elson, B. W. Boudouris, E. Namdas, J. D. Yuen, A. J. Heeger, N. Samarth, M. Di Ventra, R. A. Segalman, D. D. Awschalom, F. Wang, and D. N. Basov We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either x =0.015 Ga 1− x Mn x As or x =3.2×10 −4 Ga 1− x Be x As. The devices are tailored for interrogation of electric field-induced changes to the frequency-dependent conductivity in the accumulation o... [Phys. Rev. B 86, 165302] Published Mon Oct 01, 2012
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics